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NTT LSI laboratories | 論文
- Chemical State of Phosphorus at the Silicon Surface
- Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
- Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
- Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
- Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
- Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
- Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
- リニア低密度ポリエチレンの空間電荷特性と電極効果
- AlNセラミック基板上に集積した共鳴トンネルペア発振器(機能ナノデバイス及び関連技術)
- AlNセラミック基板上に集積した共鳴トンネルペア発振器(機能ナノデバイス及び関連技術)
- Photoemission Study of Temperature-Induced and Photoinduced Spin-State Transitions in Spin-Crossover Complex [Fe(ptz)_6](BF_4)_2(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Effect of Nitrogen on Diffusion in Silicon Oxynitride
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
- Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model