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NTT LSI laboratories | 論文
- Finite-element method analysis of low-frequency wideband array composed of disk bender transducers with differential connections (Special issue: Ultrasonic electronics)
- A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
- An Electron Beam Nanolithography System and its Application to Si Nanofabrication
- Metrology of Atomic Force Microscopy for Si Nano-Structures
- {111} Facet Formation during Lateral Solid-Phase Epitaxy of Silicon
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- Patterning Yield of Sub-100-nm Holes Limited by Fluctuation of Exposure and Development Reactions in Synchrotron Radiation Lithography Using Biased Mask Patterns
- Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region
- Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography
- Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography
- InP-Based Ultrafast Resonant Tunneling High Electron Mobility Transistors(RTHEMTs) : Novel I-V Characteristics and Circuit Applications
- Reset-set flip-flop based on a novel approach to modulating resonant-tunneling current with FETs
- Influence of Reaction Products and Oxygen on Highly Selective Electron Cyclotron Resonance Ion Stream Etching of Si
- Monostable-Bistable Transition Logic Elements (MOBILEs) Based on Monolithic Integration of Resonant Tunneling Diodes and FETs
- Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
- Characterization of Phosphorus Pile-Up at the SiO_2/Si Interface