Influence of Reaction Products and Oxygen on Highly Selective Electron Cyclotron Resonance Ion Stream Etching of Si
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-10-15
著者
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Tsuchizawa Tai
Ntt Lsi Laboratories
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MATSUO Seitaro
NTT LSI Laboratories
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TAKAHASHI Chiharu
NTT LSI Laboratories
関連論文
- Neutral Stream Extraction from Electron Cyclotron Resonance Plasma by Using Parallel Magnetic Field
- Generation of Electron Cyclotron Resonance Neutral Stream and Its Application to Si Etching
- Influence of Reaction Products and Oxygen on Highly Selective Electron Cyclotron Resonance Ion Stream Etching of Si
- Optical Image Simulator Using the Real-Space Expression of the Object Pattern and a Differential Operator for Optical Proximity Effect Estimation
- Resolution Enhancement by Oblique Illumination Optical Lithography Using a Transmittance-Adjusted Pupil Filter
- Patterning Characteristics of Oblique Illumination Optical Lithography
- Analytical Method for Image Characteristics of Annular Illumination with a Spatial Filter in Optical Projection Lithography
- Processing Uniformity Improvement by Magnetic Field Distribution Control in Electron Cyclotron Resonance Plasma Chamber
- Behavior of Reaction Products of Poly-Si in Electron Cyclotron Resonance Ion Stream Etching and Its Application to Stable and High-Selectivity Etching
- Wave Propagation in a Cylindrical Electron Cyclotron Resonance Plasma Chamber
- Evaluation of the Electron Cyclotron Resonance Plasma Process Using a Microwave Twin-Lead Line Probe