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NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan | 論文
- Efficient Carrier-Envelope Offset Locking with a Simplified Configuration of an $f$-to-$2f$ Interferometer
- Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy
- High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN $ p$–$i$–$n$ Vertical Conducting Diode on $n$-SiC Substrate
- RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
- Studies on Metal–Oxide–Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications
- Single-Electron Charging Effects in a Semiconductor Quantum Wire with Side-Coupled Quantum Dot
- Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
- Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
- Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
- Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
- Differential Phase Shift Quantum Key Distribution Using 1.3-μm Up-Conversion Detectors
- Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
- Measurement of the True Value of the Carrier-Envelope Phase of a Few-Cycle Laser Pulse by the Interference between Second and Third Harmonics from the Surface of a Solid
- Line-Edge Roughness: Characterization and Material Origin
- Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition