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Mitsubishi Electric Corp. Hyogo Jpn | 論文
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Effect of W Film Stress on W-Gate MOS Characteristics
- Evaluation of Laser CVD Tungsten for Gete Electrode : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
- EVALUATION OF THE TILTED HOMEOTROPIC ALIGNMENT OF LIQUID-CRYSTAL MOLECULES USING THE RUBBING METHOD
- A Double-Layer Electrically Controlled Birefringence Liquid-Crystal Display with a Wide-Viewing-Angle Cone
- Tilted Homeotropic Alignment of Liquid-Crystal Molecules Using the Rubbing Method
- Alignment of Liquid Crystals on a Ferroelectric Transparent Ceramic Plate : L: LIQUID CRYSTALS
- Alignment of Ferroelectric Liquid Crystals on a Ferroelectric Transparent Ceramic Plate : L: Liquid Crystals
- Etching for 0.15-μm-Level Patterns with Low Microloading Effect Using Beam Plasmas Generated by Gas Puff Plasma Sources
- Simulation of Ion Trajectories near Submicron-Patterned Surface Including Effects of Local Charging and Ion Drift Velocity toward Wafer ( Plasma Processing)
- Platinum Etching and Plasma Characteristics in RF Magnetron and Electron Cyclotron Resonance Plasmas
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Measurement of Atomic Incorporation Rates and Modeling of Surface Reactions in (Ba,Sr)TiO_3 Films Prepared by a Liquid Source Chemical Vapor Deposition
- Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2