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Mitsubishi Electric Corp. Hyogo Jpn | 論文
- Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy
- Atomically Flat GaAs(001) Surfaces Obtained by High-Temperature Treatment with Atomic Hydrogen Irradiation
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Ionized Cluster Beam Deposition Source for Aluminum and Aluminum Oxide Formation : Ion Beam Process
- Ionized Cluster Beam Deposition Source for Aluminum and Aluminum Oxide Formation
- Production of 35 keV, 1 A Steady-State Ion Beam
- 3D-Computer Simulation of Ion-Beam Deflection Caused by the Displacement of Extraction Electrodes
- Electron-Beam-Induced Deposition of Pt for Field Emitter Arrays
- Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure (Special Issue on Microelectronic Test Structure)
- Study of an Elevated Drain Fabrication Method for Ultra-Shallow Junction
- Novel Ultra-Clean Self Aligned Silicide (Salicide) Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1μm Gate Electrode
- Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
- Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
- Single Photonic-Crystal Defect Switch for All-Optical Ultrafast Operation Using Two Photon Absorption(Ultrafast Photonics)
- Evaluation of Limiting Shear Stress of Lubricants by Roller Test
- Generation Currernt Reduction at Local Oxidation of Silicon Isolation Edge by Low-Temperature Hydrogen Annealing