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Mitsubishi Electric Corp. Hyogo Jpn | 論文
- Estimation of Measurement Characteristics of Ultrasound Fetal Heart Rate Monitor
- Pulsed Laser Deposition of Diamond-Like Carbon Films on Gated Si Field Emitter Arrays for Improved Electron Emission
- Microwave Surface Resistance Studies of YBa_2Cu_3O_ Single Crystal : Electrical Properties of Condensed Matter
- In Situ Fourier Transform Infrared Measurements of Si Surface and Bulk Plasmas in Cl_2/O_2 and HBr/O_2 Electron Cyclotron Resonance Plasma Etching: Influence of Oxygen on Reaction Products
- In situ Monitoring of Product Species in Plasma Etching by Fourier Transform Infrared Absorption Spectroscopy
- Anisotropic Etching of n^+-Polysilicon Using Beam Plasmas Generated by Gas Puff Plasma Sources
- Chemical Kinetics of Chlorine in Electron Cyclotron Resonance Plasma Etching of Si ( Plasma Processing)
- Multicusp Electron-Cyclotron-Resonance Plasma Source Working with Microwaves Radially Injected through an Annular Slit
- Measurement of the Cl Atom Concentration in RF Chlorine Plasmas by Two-Photon Laser-Induced Fluorescence
- Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2 : Etching and Deposition Technology
- Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2
- Theoretical Investigation of Charge-Up Dynamics in Teflon Film Induced by Electron Beam
- Monte Carlo Simulation of 1 eV-35 keV Electron Scattering in Teflon
- Low-Temperature Reactive Ion Etching for Multi-Layer Resist (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Mechanism for AlSiCu Alloy Corrosion
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
- Reflection and Diffraction of Laser Plasma Induced by Bombardment of TEA CO_2 Laser at Low Pressures
- 2-Dimensional Simulation of FN Current Suppression Including Phonon Assisted Tunneling Model in Silicon Dioxide
- 3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications (Special Issue on TCAD for Semiconductor Industries)