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MIRAI, Association of Super-Advanced Electronics Technologies (ASET) | 論文
- Role of Frictional Force on the Polishing Rate of Cu Chemical Mechanical Polishing
- Theoretical Investigation into Effects of Pore Size and Pore Position Distributions on Dielectric Constant and Elastic Modulus of Two-Dimensional Periodic Porous Silica Films
- Modulation of CoSi2/Si Schottky Barrier Height by Charge Transfer Doping Utilizing Cesium Segregation at the SiO2/Si Interface
- Impact of Aggressively Shallow Source/Drain Extensions on Device Performance
- Impact of Aggressively Shallow Source/Drain Extensions on the Device Performance
- Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-$k$/Cu Interconnects
- Comparative Studies of Pore Seal Films for Porous-Silica / Cu Interconnect
- Recovery of Process-induced Damages of Porous Silica Low-k Films by TMCTS Vapor Annealing
- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
- Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode
- Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
- Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+-Polysilicon/HfAlOx/SiO2 N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Height Measurement Using High-Precision Atomic Force Microscope Scanner Combined with Laser Interferometers
- Role of Frictional Force on the Polishing Rate of Cu Chemical Mechanical Polishing
- Characterization of Pore Size Distributions in Ultralow-k Films