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Lsi Laboratory Mitsubishi Electric Corporation | 論文
- SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
- ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
- ECR Plasma Etching with Heavy Halogen Ions
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- A Single-Chip MPEG-2 422P@ML Video, Audio, and System Encoder with a 162MHz Media-processor Core and Dual Motion Estimation Cores
- A Wide Range 1.0-3.6 V 200 Mbps, Push-Pull Output Buffer Using Parasitic Bipolar Transistors(Low-Power System LSI, IP and Related Technologies)
- Signal Integrity Design and Analysis for a 400 MHz RISC Microcontroller
- A Low Standby Current DSP Core Using Improved ABC-MT-CMOS with Charge Pump Circuit
- An Embedded Software Scheme for a Real-Time Single-Chip MPEG-2 Encoder System with a VLIW Media Processor Core (Special Issue on Low-Power High-Performance VLSI Processors and Technologies)
- A Design of High-Speed 4-2 Compressor for Fast Multiplier (Special Issue on Ultra-High-Speed LSIs)
- Adhesion of Photoresist Pattern Baked at 80 to 325℃ in Tetramethyl-ammonium-hydroxide Aqueous Solution
- Characterization of Surface Energetic Behavior by Atomic Force Microscopy
- Adhesion of Photoresist Micropattern to Aluminum Substrate in Alkaline Aqueous Solution
- Dependence of Offset Error on Overlay Mark Structures in Overlay Measurement