スポンサーリンク
Institute of Materials Science, The University of Tsukuba | 論文
- Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
- Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
- Positron Annihilation in Vitreous Silica Glasses
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam