スポンサーリンク
Institute of Materials Science, The University of Tsukuba | 論文
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Vacancy-Type Defects in Be-Implanted InP
- Evaluation of SOI Substrates by Positron Annihilation
- Evaluation of SOI Substrates by Positron Annihilation
- The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
- Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam
- Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
- 28aPS-36 Single Crystal Growth of RuSr_2GdCu_2O_8 compound : Part II
- 30aYL-12 Specific heat and superconducting properties of RuSr_2 RECu_2O_8 (RE=Sm, Eu, Gd)
- 25pSF-13 Ferromagnetism and Superconductivity in RuSr_2RCu_20_8(R=Gd,Eu,Sm)
- Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
- Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam