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Institute of Electronics, National Chiao Tung University | 論文
- A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
- A Novel Process-Compatible Floating Channel Crystallization Technique to Fabricate High-Performance Poly-Si TFTs
- Improvement of Electrical Characteristics for Novel Fluorine-Incorporated Poly-Si TFTs with TiN Gate Electrode and Pr_2O_3 Gate Dielectric
- Improvements on Electrical Characteristics of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors with HfO_2 Gate Stacks by Post Deposition N_2O Plasma Treatment
- Effectiveness of NH_3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ) : Semiconductors
- Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of LOW-k Hydrogen Silisesquioxane
- Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
- Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
- New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
- The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO_3 Thin Films Deposited by Liquid Source Misted Chemical Deposition : Instrumentation, Measurement, and Fabrication Technology
- Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
- Effects of N_2O-Plasma Treatment of a-SiO_xN_y/a-SiN_x Gate Insulators on Electrical Stability of a-Si:H Thin-Film Transistors
- Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
- Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
- Conduction Mechanisms for Off-State Leakage Current of Schottky Barrier Thin-Film Transistors (SBTFT)
- Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
- Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage