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Institute Industrial Science, The University of Tokyo | 論文
- Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
- Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor ( Quantum Dot Structures)
- Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
- Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs
- Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
- Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs
- High Performance Accumulated Back-Interface Dynamic Threshold SOI MOS-FET's (AB-DTMOS) with Large Body Effect at Low Supply Voltage
- Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations(Device,Low-Power, High-Speed LSIs and Related Technologies)
- Short Channel Characteristics of Variable Body Factor FD SOI MOSFETs
- Future Electron Devices and SOI Technology : Semi-Planar SOI MOSFETs with Sufficient Body Effect
- Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect Transistor Memories with Silicon Nanocrystal Floating Gates
- Optimum Condutions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs
- Optimum Conditions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs
- Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage
- Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
- Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- New Measurement Technique for Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs