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Institute Industrial Science, The University of Tokyo | 論文
- Extremely Large Amplitude of Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
- Origin of Critical Substrate Bias in Variable Threshold Voltage Complementary MOS (VTCMOS)
- Origin of Critical Substrate Bias in Variable Threshold Voltage CMOS
- Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
- Suppression of Stand-by Tunnel Current in Ultra-Thin Gate Oxide MOSFETs by Dual Oxide Thickness MTCMOS(DOT-MTCMOS)
- Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors
- Room-Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors
- High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method
- Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
- Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime
- Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors
- Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current
- Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode
- Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
- Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors
- Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor
- Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors
- Temperature Dependence of Off-Current in Bulk and Fully Depleted SOI MOSFETs
- On the Origin of Negative Differential Conductance in Ultranarrow-Wire-Channel Silicon Single-Electron and Single-Hole Transistors
- Superior $\langle 110\rangle$-Directed Electron Mobility to $\langle 100\rangle$-Directed Electron Mobility in Ultrathin Body (110) n-Type Metal–Oxide–Semiconductor Field-Effect Transistors