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Institute Industrial Science, The University of Tokyo | 論文
- Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)
- Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
- Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method
- Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
- Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors
- Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations
- Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal--Oxide--Semiconductor Field Effect Transistors
- Integration of Complementary Metal--Oxide--Semiconductor 1-Bit Analog Selectors and Single-Electron Transistors Operating at Room Temperature
- Reverse Short-Channel Effect of Body Factor in Low-Fin Field-Effect Transistors Induced by Corner Effect
- Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature
- Effects of Side Surface Roughness on Carrier Mobility in Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
- Direct Measurement of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
- Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors
- Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress
- Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs
- NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
- Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors
- Future Electron Devices and SOI Technology —Semi-Planar SOI MOSFETs with Sufficient Body Effect—
- Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Direct Measurement of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)