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Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation | 論文
- Flat Band State Determination of MIS and Schottky Interfaces by Modulated Photoluminescence Method
- Surface Band Bending Effects on Photoluminescence Intensity in n-InP Sehottky and MIS Diodes
- Liftoff Patterning of Superconductive NbN Films Using Polyimide Masks
- Examination of the Properties of Superconducting Nb-Ge Films Prepared by DC Magnetron Sputtering
- Fabrication and I-V Characteristics of High-T_c Nb_3Ge Microbridges
- Electrical Resistivity of Internally Oxidized Cu-Al Alloys
- Submicron Fabrication of Nb_3Ge Microbridges with Electron-Beam Resist Chloromethylated Poly-x-Methylstyrene
- NbN/Nb Josephson Junction with a Plasma Oxidized Barrier
- Annealing Stability of NbN/Pb Josephson Tunnel Junctions with Plasam Oxidized Barriers
- Fabrication of High Quality NbN/Pb Josephson Tunnel Junctions with Plasma Oxidized Barriers
- On the Intermediate State of Dehydration of Synthetic Goethite
- Thin Film Optical Circuit Fabrication Using a CO_2 Laser : B-4: OPTOELECTRONIC DEVICES
- Hysteresis Loop in Current-Voltage Curve for BaPb_Bi_O_3 Josephson Junction Array in a Microwave Field : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Epitaxial Growth of NbN Thin Films at Room Temperature by Ion-Beam Sputtering Deposition
- Laser Annealing of Nb Films Prepared by Ion Beam Sputtering
- Pattern Size Dependence of Sensitivity of Inorganic SeGe/Ag Resist
- Anomalous Ag Surface Diffusion in Amorphous Se-Ge/Ag Inorganic Resist
- Internal Stress and Thermal Expansion Coefficient of GDa-Si Films
- Impurity Absorption Losses in the Infrared Region due to 3d Transition Elements in Fluoride Glass
- Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal