Fabrication of High Quality NbN/Pb Josephson Tunnel Junctions with Plasma Oxidized Barriers
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概要
- 論文の詳細を見る
Extremely low subgap leakage current NbN/Pb tunnel junctions, in which V_ms exceed 100 mV, were fabricated using a low energy rf plasma oxidation technique. This was done under conditions where cathode self bias voltages V_<CSB> were below 200 V. XPS study shows that NbN surface oxide layer thickness increases from 1.5 nm to 4.5 nm after Ar ions bombarded the NbN surface at V_<CSB>S above 200V. At ion bombardment at V_<CSB>s above 200V produces a damaged layer on the NbN surface. Artifical initial oxide layer formation subsequent to NbN film preparation is effective in reducing subgap current under lower V_<CSB> conditions for cleaning and oxidation.
- 社団法人応用物理学会の論文
- 1982-11-20
著者
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Hikita M
Ntt Advanced Technol. Corp. Ibaraki Jpn
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Hikita Makoto
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hikita Makoto
Ntt Photonics Laboratories
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Takei K
Pioneer Corp. Saitama Jpn
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Takei Koji
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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IWATA Tsunekazu
NTT Opto-Electronics Laboratory
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Igarashi M
Joint Research Center For Atom Technology(jrcat) Angstrom Technology Partnership
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IWATA Tsunekazu
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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IGARASHI Masaru
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Iwata Tsunekazu
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Iwata T
Hokkaido Tokai Univ. Sapporo Jpn
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Igarashi Masaru
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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