Epitaxial Growth of NbN Thin Films at Room Temperature by Ion-Beam Sputtering Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-05-05
著者
-
Takei Koji
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
NAGAI Kazutoshi
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Nagai Kazutoshi
Ibaraki Electrical Communication Laboratory
関連論文
- NbN/Nb Josephson Junction with a Plasma Oxidized Barrier
- Fabrication of High Quality NbN/Pb Josephson Tunnel Junctions with Plasma Oxidized Barriers
- Epitaxial Growth of NbN Thin Films at Room Temperature by Ion-Beam Sputtering Deposition
- Laser Annealing of Nb Films Prepared by Ion Beam Sputtering
- The Effect of Ion Bombardment on Carbon Films Prepared by Laser Evaporation
- Effects of Heat Treatment of CdS Single Crystals Examined by ESCA
- Growth of Craters on Ion Etched Surface of LiNbO_3 and Ion Etching without Craters
- Thinning of LiNbO_3 for Acousto-Optic Deflectors by Ion Etching