Laser Annealing of Nb Films Prepared by Ion Beam Sputtering
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概要
- 論文の詳細を見る
The effect of laser annealing on the superconducting critical temperature [T_c] in Nb films prepared by the ion-beam sputtering method has been investigated. Ion beam sputtered Nb films at a substrate temperature of 50℃ indicated a large increase in lattice parameter and acorresponding decrease in T_c. After annealing by pulsed laser irradiations, the film showed recovery in both lattice parameter and T_c. The relation between lattice parameter and T_c of the laser annealed films is generally similar to that of the as-deposited films.
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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Inamura Takahiro
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Takei Koji
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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NAGAI Kazutoshi
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Nagai Kazutoshi
Ibaraki Electrical Communication Laboratory
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