NbN/Nb Josephson Junction with a Plasma Oxidized Barrier
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概要
- 論文の詳細を見る
Oxide growth on a niobium nitride film formed by rf plasma oxidation was studied using NbN/Nb-oxide/Nb tunnel junctions. A model of the oxide growth on niobium nitride is discussed to compare the oxidation on a film with a pre-oxidized layer formed by thermal oxidation and a film without the pre-oxidized layer. Using a thermally pre-oxidized layer, a junction with high critical current density can form with good controllability.
- 社団法人応用物理学会の論文
- 1984-05-20
著者
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Takei K
Pioneer Corp. Saitama Jpn
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Takei Koji
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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IWATA Tsunekazu
NTT Opto-Electronics Laboratory
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Igarashi M
Joint Research Center For Atom Technology(jrcat) Angstrom Technology Partnership
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IWATA Tsunekazu
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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IGARASHI Masaru
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Iwata Tsunekazu
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Iwata T
Hokkaido Tokai Univ. Sapporo Jpn
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Igarashi Masaru
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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