Effects of Magnetic Field Gradient on Crystallographic Properties in Tin-Doped Indium Oxide Films Deposited by Electron Cyclotron Resonance Plasma Sputtering
スポンサーリンク
概要
- 論文の詳細を見る
Tin-doped indium oxide (ITO) films were deposited by sputtering of sintered oxide targets, employing an electron cyclotron resonance (ECR) microwave plasma system. The effects of Ar ion bombardment on crystallographic and electrical properties of the films were investigated with control of the ion energy by submagnetic field application. It was found that ion bombardment with energies lower than 〜4O eV enhances crystallization whereas bombardment with higher energies suppresses crystallization. The surface roughness of the film was below 50 Å. The smooth surface formation could be attributed to the microstructural modification arising from ion bom bardment.
- 社団法人応用物理学会の論文
- 1994-09-15
著者
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Shigesato Yuzo
O Ntt Ibaraki R & D Center:(present Address) Ntt Opto-electronics Laboratories
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Suzuki Kohichi
Advanced Glass R & D Center Asahi Glass Co. Ltd.
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Igarashi M
Joint Research Center For Atom Technology(jrcat) Angstrom Technology Partnership
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KUBOTA Eishi
Advanced Film Technology Inc., c
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IGARASHI Masaru
Advanced Glass R & D Center, Asahi Glass Co., Ltd.
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HARANOU Takeshi
NTT Interdisciplinary Research Laboratories
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Kubota E
Advanced Film Technology Inc. C
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