Fabrication and I-V Characteristics of High-T_c Nb_3Ge Microbridges
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概要
- 論文の詳細を見る
High-T_c Nb_3Ge microbridges are fabricated by electron-beam lithography combined with CF_4 reactive sputter etching. The bridges are 0.48 μm wide and 0.36-0.6 μm long. The temperature dependence of I_c is found to be proportional to (1-t)^<5/2> at t>0.8 (t=T/T_c). This result means that the bridge region behaves like an inhomogeneous type-II superconductor film. 9.75 GHz microwave induced steps are observed throughout a wide temperature range. The steps are observed above 20 K in some bridges.
- 社団法人応用物理学会の論文
- 1982-01-05
著者
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Kakuchi Masami
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hikita Makoto
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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NAKAMURA Kiko
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Nakamura Kiko
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kubo Shugo
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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IGARASHI Masaru
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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KOGURE Osamu
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Kogure Osamu
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kogure Osamu
Ibaraki Electrical Communication Laboratory
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Igarashi Masaru
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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