Bias Sputtering of Superconducting Nb_3Ge
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-01-20
著者
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NAKAMURA Kiko
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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ASANO Hidefumi
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Nakamura Kiko
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Asano Hidefumi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TERADA Akira
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Terada Akira
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Synthesis of Compositionally Graded A15 Nb-Si Films by Co-Sputtering
- Tunneling Measurements on A15 Nb-Si Films
- Synthesis of A15Nb_3Ge by Pulsed Laser Annealing
- Bias Sputtering of Superconducting Nb_3Ge
- Reactive Synthesis of Niobium Nitride by Pulse Laser Annealing
- Reactive Synthesis of Niobium Nitride by Pulse Laser Annealing
- Examination of the Properties of Superconducting Nb-Ge Films Prepared by DC Magnetron Sputtering
- Fabrication and I-V Characteristics of High-T_c Nb_3Ge Microbridges
- On the Intermediate State of Dehydration of Synthetic Goethite
- Fluoride Barriers in Nb/Pb Josephson Junctions
- High Coercive Thin Films of Co-Doped γ-Fe_2O_3-Fe_3O_4 Solid Solution
- Perpendicular Magnetic Anisotropy in γ-(Fe_Os_x)_2O_3 Thin Films