Electrical Resistivity of Internally Oxidized Cu-Al Alloys

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概要

• 論文の詳細を見る

• The electrical resistivities at room temperature have been investigated precisely after partial and complete internal oxidation. The internal oxidation rates obtained through electrical resistivity measurements are always smaller than the real rates which are obtained metallo-graphically. This suggests that the resistivities of subscales after partial internal oxidation are greater than those after complete internal oxidation, and that it is wrong to estimate internal oxidation rates through resistivity measurements. After complete internal oxidation, deviations from Matthiessen's rule (DMR) are observed in the internally oxidized Cu-Al alloys. The DMR's at 2O℃ have the same magnitudes as those of the residual resistivities and are nearly proportional to the volume fraction of dispersed Al_2O_3 particles. The DMR at 20℃ in the Cu-1.0 vol%Al_20_3, alloy is 0.037 μΩ-cm. The origin of the DMR is attributed to dispersed oxide particles.

• 社団法人応用物理学会の論文
• 1977-03-05

著者

• Kubo Shugo

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yamauchi Goro

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• ARITA Kishio

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Arita Kishio

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

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• Examination of the Properties of Superconducting Nb-Ge Films Prepared by DC Magnetron Sputtering
• Fabrication and I-V Characteristics of High-T_c Nb_3Ge Microbridges
• Electrical Resistivity of Internally Oxidized Cu-Al Alloys
• Modification of Conventional Formulas for the Evaluation of the Interparticle Spacing in Dispersion Alloys
• On the Formation of the Internal Oxidation Band of Cu-Cr Alloy

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