Anomalous Ag Surface Diffusion in Amorphous Se-Ge/Ag Inorganic Resist

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概要

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• An anomalous patterning was observed gollowing a double light exposure of Se-Ge/Ag resist. This anomaly is considered to be caused by Ag diffusion from the masked region into the exposed region through an ionic conductive Ag_2Se layer. This surface diffusion also explains the edge sharpening effect.

• 社団法人応用物理学会の論文
• 1981-09-05

著者

• Zembutsu Sakae

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Kasai Toshio

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• FUNAKOSHI Nobuhiro

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Funakoshi Nobuhiro

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Pattern Size Dependence of Sensitivity of Inorganic SeGe/Ag Resist
• Anomalous Ag Surface Diffusion in Amorphous Se-Ge/Ag Inorganic Resist
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• Authors' Reply to Comment on "Anomalous Ag Surface Diffusion in Amorphous Se-Ge/Ag Inorganic Resist"
• The Crystallization Kinetics of Amorphous PdAgSi Alloys
• Liquid Quenching of Pd_Ag_xSi_ Alloys

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