Thermal Behavior and Crystallization Kinetics of Amorphous PdSi Alloys
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概要
- 論文の詳細を見る
Thermal behavior and crystallization temperatures of amorphous PdSi alloys prepared by the roller-quenching method were studied by DTA and electrical resistivity change. The compositional dependence of the crystallization temperatures indicates that the stable amorphous phase of PdSi is Pd_<82>Si_<18>, whose crystallization stage is large and single. Isothermal annealing was performed on the most stable amorphous Pd_<82.3>Si_<17.7> among the samples made in this experiment. The crystallization process of its alloy is explained by the equation of the autocatalyzed reaction. In the crystallization of amorphous PdSi, the exotherm has an important role, which accelerates the reaction. From the result of the isothermal annealing, the activation energy for crystallization is estimated to be 1.58 eV.
- 社団法人応用物理学会の論文
- 1978-01-05
著者
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KANAMORI Terutoshi
NTT Photonics Laboratories Ibaraki
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FUNAKOSHI Nobuhiro
NTT Strategic Technology Business Planning Department
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Kanamori T
Research Laboratory Oki Electric Industry Co. Ltd.
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MANABE Toyotaka
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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FUNAKOSHI Nobuhiro
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Funakoshi Nobuhiro
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kanamori Terutoshi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Manabe Toyotaka
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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