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Department of Information Systems Engineering, Toyama Prefectural University | 論文
- Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
- Symptomatic Chiari Malformation and Associated Pathophysiology in Pediatric and Adult Patients without Myelodysplasia
- A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs
- A CMOS Temperature Sensor Circuit(Integrated Electronics)
- A Test Structure to Analyze Electrical CMOSFET Reliabilities between Center and Edge along the Channel Width(Semiconductor Materials and Devices)
- A Test Structure to Analyze Highly-Doped-Drain and Lightly-Doped-Drain in CMOSFET(Semiconductor Materials and Devices)
- Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate
- A Temperature and Supply Voltage Independent CMOS Voltage Reference Circuit(Integrated Electronics)
- A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission(Microelectronic Test Structures)
- Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors
- Quantum-Mechanical Simulation of Counter Doped Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Single Work Function Metal Gate
- Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO_2(Special Issue on Electronic Displays)
- Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n^+-Polysilicon Gates
- A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs(Special Issue on Microelectronic Test Structures)
- A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs (Special Issue on Microelectronic Test Structures)
- EXAGGERATED CENTRAL CARDIOVASCULAR RESPONSES TO ANGIOTENSIN II AND RENIN AND INHIBITION BY ORAL TAURINE IN SPONTANEOUSLY HYPERTENSIVE RATS
- Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
- A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs
- Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach (Special Issue on SOI Devices and Their Process Technologies)
- Picosecond Laser Photolysis Studies on Chain-Length, Solvent and Temperature Dependences of the Intramolecular Photoredduction process of Benzophenone by Diphenylamine