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Department Of Electronic Engineering Feng Chia University | 論文
- Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch (CTS) Converter
- Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
- Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor
- New Fabrication Process of Single-Crystalline Silicon Islands Using Double Diffusion : Application to a Heating Resistor of a Thermal Inkjet Printhead
- High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)
- Mobility Enhancement of MOSFETs on p-Silicon (111) with In-situ HF-Vapor Pre-Gate Oxide Cleaning
- Logarithmic AC Response in Rb_3C_ Crystals
- Flux Pinning and Vortex Dynamics in K3C60 Crystals
- Growth of Single Crystals of C_ and C_
- Design of Optimum Power Insulated-Gate Bipolar Transistor Using Response Surface Method
- Effective Prevention of Single Event Burnout for N-Channel Power MOSFETs
- Robust Data Retention and Superior Endurance of Silicon-Oxide-Nitride-Oxide-Silicon-Type Nonvolatile Memory with NH-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer (Special Issue : Solid State Devices and Materials (2))
- An Analytical Model for Silicon-on-Insulator Reduced Surface Field Devices with Semi-Insulating Polycrystalline Silicon Shielding Layer
- Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
- Investigations of $\delta$-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded InxGa1-xAs Channel