Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch (CTS) Converter
スポンサーリンク
概要
- 論文の詳細を見る
A novel voltage level controller for low-power charge pump converters will be presented in this paper. The proposed voltage level controller would react according to the pumped voltage in the charge-transfer-switch (CTS) converter. For the CTS circuit, the pumping operation would be degraded by the charge sharing effect in the auxiliary switch path. In this study, a voltage shifter was used as the voltage level controller to overcome this serious problem without consuming too much chip area. The simulation results showed that the converter can accept a rated input of 1.5V and generated an output up to 8V based on the TSMC 0.35-µm CMOS technology. The layout consumed an area of 125*160µm2. The highest output obtained in measuring the real chip was 5.5V which is primarily due to the limitation that the transistor could tolerated. The largest load was estimated as high as 6mW which is large enough for on-chip application.
- (社)電子情報通信学会の論文
- 2008-12-01
著者
-
Liu Don-Gey
Department of Electronics Engineering & Institute of Electronics, National Chiao Tung Uiversity
-
Shiau Miin-shyue
Graduate Institute Of Electrical And Communications Engineering Feng Chia University
-
Liu Don-gey
Department Of Electronic Engineering Feng Chia University
-
LIAO Shry-Sann
IC-EMC Research Center, Feng Chia University
-
Liao Shry-sann
Ic-emc Research Center Feng Chia University
関連論文
- Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
- Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch (CTS) Converter
- Effects of Concentration of Nanoscale Tin-Doped Indium Oxide on Electrical Breakdown of High-Resistance Liquid Crystal
- Effects of Nanoscaled Tin-Doped Indium Oxide on the Image Sticking Property of Liquid Crystal Cells