Effects of Nanoscaled Tin-Doped Indium Oxide on the Image Sticking Property of Liquid Crystal Cells

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概要

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• Unusual residual time of image sticking under high-voltage electrostatic discharge (ESD) stress on liquid crystal (LC) cells has been observed. It was found that nanoscaled conductive particles doped in LC cells can significantly reduce the residual time of image sticking and the breakdown voltage of the LC cells. This finding can help to protect the doped cells from the attacks of ESD and thus to improve their displaying performance and reliability. In this study, nanoscaled tin-doped indium oxide (ITO) powders were uniformly mixed with high-resistance LC to form a suspension solution. In order to investigate other effects of ITO particles on the LC at high and low voltages, optical and electrical characteristics were compared for the doped cells and those samples without intentional doping. According to the measurement results, it is interesting to find that, except the breakdown characteristic, no other properties in the doped samples were changed with respect to the displaying functions under normal operational voltage.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-02-25

著者

• Liu Don-gey

  Department Of Electronic Engineering Feng Chia University

• Shie Wun-Yi

  Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan 40724, R.O.C.

• Liang Bau-Jy

  Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan 40724, R.O.C.

• Bau-Jy Liang

  Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan 40724, R.O.C.

• Sy-Ruen Huang

  Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan 40724, R.O.C.

関連論文

• Ray Tracing in an Inhomogeneous Liquid Crystal Cell
• Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
• Eliminating the Reverse Charge Sharing Effect in the Charge-Transfer-Switch (CTS) Converter
• Effects of Concentration of Nanoscale Tin-Doped Indium Oxide on Electrical Breakdown of High-Resistance Liquid Crystal
• Effects of Nanoscaled Tin-Doped Indium Oxide on the Image Sticking Property of Liquid Crystal Cells

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