Effects of Concentration of Nanoscale Tin-Doped Indium Oxide on Electrical Breakdown of High-Resistance Liquid Crystal

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概要

• 論文の詳細を見る

• According to our previous study, a high concentration of nanoscale tin-doped indium oxide (ITO) may be beneficial for protecting liquid crystal (LC) against attacks by electrostatic discharge (ESD). In this study, the influence of high-voltage stresses in an ESD test was investigated for cells doped with different concentrations of ITO. It was found that nano-ITO with a concentration of 0.4% in weight ratio deteriorated the physical properties of LC of transparency transition and charge retention. However, our experiment showed that the capability of ESD protection for the doped LC was still improved at the ITO concentration of 0.4 wt %. This finding supports the proposed model in our previous report. The role of ITO in the LC is not always beneficial, as discussed in this paper.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2011-05-25

著者

• Liang Bau-jy

  Department Of Electronic Engineering Feng Chia University

• Liu Don-gey

  Department Of Electronic Engineering Feng Chia University

• Chang Chih-yuan

  Department Of Automation Engineering Kao Yuan Institute Of Technology

• Chang Chih-Yuan

  Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan 40724, R.O.C.

• Shie Wun-Yi

  Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan 40724, R.O.C.

• Liang Bau-Jy

  Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan 40724, R.O.C.

• Liu Don-Gey

  Department of Electronic Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan 40724, R.O.C.

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