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Central Research laboratory, Hitachi Ltd. | 論文
- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- Effects of Carbon Intermediate Layer on Structural and Magnetic Properties of Double-Layered Perpendicular Magnetic Recording Media(Special Issue on Recent Progress in Information Storage Technology)
- Effect of Nonmagnetic Underlayer on Structural and Magnetic Properties of CoCr-Alloy Thin Film Media(Special Issue on Selected Papers from the 5th Asian Symposium on Information Storage Technology)
- Novel SiGe-on-Insulator Virtual Substrate Fabricated by Self-Melt-Solidification
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
- High-Reliability Programming Method Suitable for Flash Memories of More Than 256Mb
- Studies of Dielectric Properties and Band Parameters of N-Pb_Sn_xTe by Magnetoplasma Waves
- Electric-Energy Generation through Variable- Capacitive Resonator for Power-Free LSI(Low-Power System LSI, IP and Related Technologies)
- High Packing Density, high Speed CMOS (Hi-CMOS) Device technology : A-3: MOS DEVICE AND LIST (3)
- Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
- Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping
- Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type
- Behavior of Active and Inactive Boron in Si Produced by Vapor-Phase Doping during Subsequent Hydrogen Annealing
- Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies)
- Analysis of MRI Slotted Tube Resonator Having a Shield of Conducting Circular Cylinder
- PGMA as a High Resolution, High Sensitivity Negative Electron Beam Resist
- The Umbrella Cell : A High-Density 2T Cell for SOC Applications(Memory, Low-Power LSI and Low-Power IP)
- Sub 1V Swing Internal Bus Architecture for Future Low-Power ULSI's (Special Section on the 1992 VLSI Circuits Symposium)
- The Advantages of a DRAM-Based Digital Architecture for Low-Power, Large-Scale Neuro-Chips