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Central Research Laboratory, HITACHI, LTD. | 論文
- Lymph-Node Detection System Using a High T_c SQUID and Ultra-Small Particles(Special Issue on Superconductive Electronics)
- Properties of High T_c Superconducting Quantum Interference Device Microscope With High μ-Metal Needle : Superconductors
- Fabrication and Operation of Si-Coupled Superconducting FET with 0.1μm Gate : Microfabrication and Physics
- Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
- Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
- Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Noise Reduction Techniques for a 64kb ECL-CMOS SRAM with a 2ns Cycle Time (Special Issue on LSI Memories)
- Redundancy Technique for Ultra-High-Speed Static RAMs
- Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
- Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
- Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
- Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
- Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
- A Design of Constant-Charge-Injection Programming Scheme for AG-AND Flash Memories Using Array-Level Analytical Model
- Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
- Fabrication of Pd(Zr, Ti)O_3 Microscopic Capacitors by Electron Beam Lithography
- SrRuO_3 Thin Films Grown under Reduced Oxygen Pressure
- Orientation and Crystal Structure of SrTiO_3 Thin Films Prepared by Pulsed Laser Deposition