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Central Research Laboratory, HITACHI, LTD. | 論文
- Amorphous-Se/GaAs : A Novel Heterostructure for Solid-State Devices
- An Exact Leading Non-Zero Detector for a Floating-Point Unit(Digital, Low-Power LSI and Low-Power IP)
- A 4500 MIPS/W, 86μA Resume-Standby, 11μA Ultra-Standby Application Processor for 3G Cellular Phones(Digital, Low-Power LSI and Low-Power IP)
- An Embedded Processor Core for Consumer Appliances with 2.8GFLOPS and 36 M Polygons/s FPU(System Level Design)(VLSI Design and CAD Algorithms)
- Dependence of Deep Level Concentration on Nonstoiehiometry in MOCVD GaAs
- Polymer Dissolution Characteristics of Radiation-Induced Grafted Resist in X-Ray Lithography
- High-Quality Carbon-Doped Boron Nitride Membrane for X-Ray Lithography Mask
- Low-Temperature Annealing Effect on Bi-Sr-Ca-Cu-O Thin Films Prepared by Layer-by-Layer Deposition
- Thin Film Growth of YBa_2Cu_3O_ by ECR Oxygen Plasma Assisted Reactive Evaporation
- Reversible Myocardial Ischemia in Asymptomatic Phase Can Be Diagnosed by Magnetocardiograms
- Magnetocardiograms Detect the Right Atrial Conduction Delay in Paroxysmal Atrial Fibrillation
- Initiation and Persistence of Atrial Flutter Visualized by Magnetocardiographic Animations
- Noninvasive Diagnosis of Partial Atrial Standstill Using Magnetocardiograms
- Immunization of Goats against Inhibin Increased Follicular Development and Ovulation Rate
- Bubble Generation by Standing Wave in Water Surrounded by Cranium with Transcranial Ultrasonic Beam
- Three-Dimensional Tracking Method of Tissue Motion with Biplane Images
- Nanoparticles with Multiple Perfluorocarbons for Controllable Ultrasonically Induced Phase Shifting
- A 300MHz Embedded Flash Memory with Pipeline Architecture and Offset-Free Sense Amplifiers for Dual-Core Automotive Microcontrollers
- OJ-427 A Novel Method to Visualize Cardiac Electrical Current Using Magnetocardiogram : Application to Patients With Dilated Cardiomyopathy(ECG/Body Surface Potential Mapping/Holter 6 (A) : OJ52)(Oral Presentation (Japanese))
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam