スポンサーリンク
Central Research Lab., Hitachi, Lid. | 論文
- Strain-Imaging Observation of Pb(Zr, Ti)O_3 Thin Films
- Strain Imaging of Lead-Zirconate-Titanate Thin Film by Tunneling Acoustic Microscopy
- Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths : Principle, Limitation and Applications of Optical Shallow Defect Analyzer
- Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
- Studies on Particle Separation by Acoustic Radiation Force and Electrostatie Force
- Micro-Probe Reflection High-Energy Electron Diffraction Technique. : III. Observation of Polycrystalline Silicon Film on Crystalline Silicon Substrate Irradiated by Continuous-Wave Ar^+-Laser
- Single-Target Sputtering Process for Lead Zirconate Titanate Thin Films with Precise Composition Control
- Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
- Current-Voltage Characteristics Including Breakdown Voltage for Au ZnO/Au/Fused Quartz Structure
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
- 100 MHz Band Ultrasonic Transducers Utilizing Epitaxially Grown ZnO Films : Ultrasonic Imaging and Microscopy
- The Oxide Reliability Improvement with Ultra-Dry Unloading in Wet Oxidation Using Load Lock Oxidation System
- Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
- Single Pulse Laser Annealing of a Double-Implanted Layer
- Degradation of n^+/p Junction Characteristics by Aluminum Contamination
- The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
- Cross-Sectional X-Ray Topographic Study of Lattice Distortion in Silicon Crystals with Oxide Film
- A New Method for Measurement of Micro-Defects near the Surface of Si Wafers : Optical Shallow Defect Analyzer (OSDA)