A New Method for Measurement of Micro-Defects near the Surface of Si Wafers : Optical Shallow Defect Analyzer (OSDA)

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• Hiraiwa Atsushi

  Semiconductor & Integrated Circuit Division Hitachi Ltd.

• TAKEDA Kazuo

  Central Research Lab., Hitachi, Lid.

• ISHIDA Hidetsugu

  Central Research Lab., Hitachi, Ltd.

• Ishida Hidetsugu

  Central Research Lab. Hitachi Ltd.

• Takeda Kazuo

  Central Research Lab. Hitachi Ltd.

関連論文

• Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths : Principle, Limitation and Applications of Optical Shallow Defect Analyzer
• Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
• Studies on Particle Separation by Acoustic Radiation Force and Electrostatie Force
• Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
• A New Method for Measurement of Micro-Defects near the Surface of Si Wafers : Optical Shallow Defect Analyzer (OSDA)

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