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Central Research Institute, Mitsubishi Materials Corporation | 論文
- Light Scattering by Submicron Particles on Film-Coated Wafers
- Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution
- Radial Distribution of Oxygen Precipitates in Czochralski Silicon Single Crystals
- Effect of Crystal Pulling Rate on Formation of Crystal-Originated "Particles" on Si Wafers
- Crystal-Originated Singularities on Si Wafer Surface after SCl Cleaning
- Effect of Native Oxide upon Formation of Amorphous SiO_x Layer at the Interface of Directly Bonded Silicon Wafers
- Effect of Interstitial Oxygen on Formation of Amorphous SiO_x Layer in Directly Bonded Czoehralski Silicon Wafers
- Change of Young's Modulus with Increasing Applied Tensile Strain in Open Cell Nickel and Copper Foams
- Tensile Deformation and Failure Behavior of Open Cell Nickel and Copper Foams
- Changes in Microstructure of Al/AlN Interface during Thermal Cycling
- High-Resolution Transmission Electron Microscopy Observation of Liquid-Phase Bonded Aluminum/Sapphire Interfaces
- Effect of SC1 Process on Silicon Surface Microroughness and Oxide Breakdown Characteristics
- A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure
- Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure
- Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer
- Mode of Occurrence and Cause of Twinning in Lithium Tetraborate Grown by Czocharalski Method
- Growth of Crack-Free 3-Inch-Diameter Lithium Tetraborate Single Crystals by Czochralski Method ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Growth of 3-Inch-Diameter Li_2B_4O_7 Single Crystal Using the Resistance Heating Furnace ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Time-Dependent Variation of Composition of SC1 Solution
- Proximity Gettering of Heavy Metals by High-Energy Ion Implantation