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Central Research Institute, Mitsubishi Materials Corporation | 論文
- Quantitative Analysis of Surface Contaminations on Si Wafers by Total Reflection X-Ray Fluorescence
- Ultrasonic Properties of Lead Zirconate Titanate Thin Films in UHF-SHF Range
- Measurement of Organic Matter on Si Wafer by Thermal Desorption Spectroscopy
- Growth of Native Oxide and Accumulation of Organic Matter on Bare Si Wafer in Air
- Study of Si Etch Rate in Various Composition of SC1 Solution
- New Low Temperature Processing of Sol-Gel SrBi_2Ta_2O_9 Thin Films
- Influence of Buffer Layers on Microstructural and Ferroelectric Characteristics of Sol-Gel Derived PbZr_xTiO_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of Pb(Zr,Ti)O_3 Films on Pi/Ti/Ta Electrodes by Sol-Get Process
- Fabrication of Diamond Membranes for X-Ray Masks by Hot-Filament Method
- Detection of Bulk Microdefects underneath the Surface of Si Wafer Using Infrared Light Scattering Tomography
- Quantification of Sulfur in Copper by Secondary Ion Mass Spectrometry(SIMS)
- Direct Temperature Measurement of Melts in Continuous Copper Converter with Expendable Immersion Optical Fiber Thermometer
- Annealing Behavior of a Light Scattering Tomography Detecting Defect near the Surface of Si Wafers
- Calculation of Diffusion Component of Leakage Currentin pn Junctions Formed in Various Types of Silicon Wafers (Intrinsic Gettering, Epitaxial, Silicon on Insulator)
- Properties of Diamond Compacts Having Different Grain Sizes with MgCO_3 Sintering Agent
- Decrease in Ozone Density of Atmospheric Surface-Discharge Plasma Source
- The Orientation and Grain Texture Effect on Life Time Reliability of Sol--Gel Derived PbZr0.52Ti0.48O3 Films
- Behavior of Dust Particles in Plasma Etching Apparatus