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Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation | 論文
- Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
- Electrical Properties of Oval Defects in GaAs Grown by MBE
- Lateral Solid-Phase Epitaxy of Vacuum-Deposited Amorphous Si Film over Recessed SiO_2 Patterns
- A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
- p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas
- Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine
- MBE Growth of High-Quality InP Using Triethylindium as an Indium Source
- Selenium Thin Film Transistor
- A Large Barrier Height Schottky Contact between Amorphous Si-Ge-B and GaAs
- Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties
- Mode Behavior Improvement in DFB LDs by Light Phase Control at the Facet
- InP/InGaAsP 1.5μm Region Etching Cavity Laser
- Thermal Oxidation of Amorphous Silicon-Germanium-Boron Alloy
- Two-Dimensional Electron Gas at n-AlGaAs/GaAs Interface Grown by Molecular-Beam Epitaxy Using Direct-Radiation Substrate Heating
- Lifetime Evaluation of Denuded Zone Quality and Intrinsic Gettering Effect on Heavy Metals
- Structural Analysis and Expeimental Characteristics of High-Voltage Bipolar Transistors with Shallow Junctions
- Homogeneity of Vertical Magnetic Field Applied LEC GaAs Crystal
- A New Planarization Technique for LSI Fabrication Utilizing Si-Ge Film Oxidation
- Stability of Mo Gate MOS Devices Using High Purity Sputtering Target
- Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane