Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane

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概要

• 論文の詳細を見る

• Phosphorus doped silicon films are deposited in the temperature range 520-665℃ by thermal decomposition of Si_2H_6. It is found that (i) the deposition rate is not decreased by the addition of PH_3 in contrast with the deposition rate for the SiH_4 system and is about 100 times higher than that for the SiH_4 system for phosphorus concentration above 1×10^<20> cm^<-3>, (ii) phosphorus concentration is proportional to the PH_3 partial pressure and to the -3/2 power of Si_2H_6 partial pressure. These characteristics mean that Si_2H_6 is suitable as a source gas to prepare the heavily phosphorus doped polycrystalline silicon for fabricating gate or emitter electrodes of LSI's.

• 社団法人応用物理学会の論文
• 1984-07-20

著者

• Yonezawa H

  Ntt Interdisciplinary Research Laboratory

• Yonezawa Hiroki

  Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation

• Yonezawa Hiroki

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Murota Junichi

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• NAKAYAMA Satoshi

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Nakayama Satoshi

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• ESTIMATION OF MINIMUM DETECTION LIMIT IN SYNCHROTRON RADIATION X-RAY FLUORESCENCE ANALYSIS
• Trench Coverage Characteristics of Polysilicon Deposited by Thermal Decomposition of Silane
• Study of Low-Temperature Oxidation in Au/Si and Cu/Si Systems by 7-MeV Alpha Particle Backscattering Analysis
• Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane
• Relationship between Scattering Loss and Oxygen Content in Fluoride Optical Fibers
• Molybdenum Film Formation by Low Pressure Chemical Vapor Deposition

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