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Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation | 論文
- Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift Motion
- Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors
- Long-Range Interaction in Multi-Layered Amorphous Film Structure
- Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering
- An Aluminum Liquid Metal Ion Source with Prolonged Lifetime Using a Sintered Boride Emitter