Long-Range Interaction in Multi-Layered Amorphous Film Structure

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概要

• 論文の詳細を見る

• Long-range interactions in amorphous semiconductor have been studied by utilizing an amorphous As_<40>Se_<60>/Ge_<25>Se_<75> multi-layered film in which the average composition is kept constant. The optical gap shifts to higher energies as the layer pitch decreases. After passing a peak, it finally approaches that of mixed ternary film. This is discussed in terms of a one-dimensional quantum size effect. The photostructural change is not affected by multi-layered structure. Infrared absorption peaks, due to As-Se_3 and Ge-Se_4 molecular vibrations, shift to higher wave numbers as the layer pitch decreases. This phenomenon can be described by using the built-in electric field, or coulomb force between As-Se_3 and Ge-Se_4 clusters, due to the electronegativity difference between As and Ge atoms. This is supported lay the oscillator strength change with the change in layer pitch.

• 社団法人応用物理学会の論文
• 1983-11-20

著者

• Ogino Toshio

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Ogino Toshio

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Mizushima Yoshihiko

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(presen

• Mizushima Yoshihiko

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(presen

関連論文

• Selenium Thin Film Transistor
• Thermal Oxidation of Amorphous Silicon-Germanium-Boron Alloy
• A New Planarization Technique for LSI Fabrication Utilizing Si-Ge Film Oxidation
• Long-Range Interaction in Multi-Layered Amorphous Film Structure

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