Thermal Oxidation of Amorphous Silicon-Germanium-Boron Alloy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-12-20
著者
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Murase Katsumi
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Murase Katsumi
Atsugi Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Ogino Toshio
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Mizushima Yoshihiko
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Ogino Toshio
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Mizushima Yoshihiko
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(presen
関連論文
- Selenium Thin Film Transistor
- A Large Barrier Height Schottky Contact between Amorphous Si-Ge-B and GaAs
- Thermal Oxidation of Amorphous Silicon-Germanium-Boron Alloy
- Barrier Heights of Junctions between Amorphous Si-Ge-B and Crystalline GaAs
- A New Planarization Technique for LSI Fabrication Utilizing Si-Ge Film Oxidation
- Long-Range Interaction in Multi-Layered Amorphous Film Structure