A New Planarization Technique for LSI Fabrication Utilizing Si-Ge Film Oxidation

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概要

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• A new planarization technique in the LSI process utilizing Si-Ge film oxidation is proposed. The Si-Ge film is deposited by the thermal decomposition of SiH_4 and GeH_4 and then oxidized in wet O_2 ambient. During the oxidation, a large degree of fluidity appears below 800℃, a temperature much lower than that needed for phosphosilicate glass flow. The oxide growth rate is more than one order of magnitude higher than that in crystalline Si. The oxide thickness decreases with increasing Ge content and oxidation temperature, owing to Ge evaporation. This planarization is related to Ge evaporation. After the entire Si-Ge film has been oxidized, neither glass flow nor Ge evaporation occur, even at temperatures higher than that of the oxidation. The electrical properties of the Si-Ge oxide film are good enough for its use as an insulating layer. The film does not react with an underlying SiO_2 or Si_3N_4 layer.

• 社団法人応用物理学会の論文
• 1985-01-20

著者

• Ogino Toshio

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• AMEMIYA Yoshihito

  Atsugi Electrical Communication Laboratories,Nippon Telegraph and Telephone Public Corporation

• Amemiya Yoshihito

  Atsugi Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

• Ogino Toshio

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Amemiya Yoshihito

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Selenium Thin Film Transistor
• Thermal Oxidation of Amorphous Silicon-Germanium-Boron Alloy
• Barrier Heights of Junctions between Amorphous Si-Ge-B and Crystalline GaAs
• A New Planarization Technique for LSI Fabrication Utilizing Si-Ge Film Oxidation
• Long-Range Interaction in Multi-Layered Amorphous Film Structure

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