Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering

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概要

• 論文の詳細を見る

• A low temperature plasma deposition method using a raw material supply by sputtering has been developed. A microwave electron cyclotron resonance technique was used for highly ionized plasma generation and plasma stream extraction at low gas pressures of 10^<-3> to 10^<-1> Pa. Gas molecules, and particles sputtered by ions in the plasma stream are ionized and transported to the specimen substrate with an energy of 10 to 30 eV. Fully oxidized, dense and high quality films of tantalum oxide and aluminum oxide were obtained at room temperature.

• 社団法人応用物理学会の論文
• 1984-08-20

著者

• Ono T

  Osaka Prefecture Univ. Osaka Jpn

• Matsuo Seitaro

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• ONO Toshiro

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• TAKAHASHI Chiharu

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Takahashi Chiharu

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Small Surface Damage Facet Coating on InGaAsP/InP Laser by ECR Plasma Deposition
• Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering

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