Lifetime Evaluation of Denuded Zone Quality and Intrinsic Gettering Effect on Heavy Metals

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概要

• 論文の詳細を見る

• Minority carrier lifetime is used in electrical evaluation of intrinsic gettering. Lifetime in the intrinsic gettered wafer denuded zone is reduced to a third that of the starting material. No defects are observed in the wafers, even by transmission electron microscopy. This suggests the possibility that oxygen-related, undetectable residual defects exist in the denuded zone. Heavy metal contamination by reactive ion etching degrades the lifetime three figures to 1 μs by inducing surface defects. Intrinsic gettering can recover more than two figures of lifetime by suppressing the defects that are to be induced by heavy metals. The gettering ability of a defect is found to be 160-800 metal atoms depending upon defect size. The bulk defect density needed for gettering various degrees of heavy metals is determined. This technique is valid for a wide range of heavy metal atoms to 10^<17>cm^<-3>.

• 社団法人応用物理学会の論文
• 1984-08-20

著者

• Ikuta Kenji

  Atsugi Laboratories Ntt Electrical Communication Laboratories

• Ikuta Kenji

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Ohara Takahiko

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Ohara Takahiko

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• MOS C-t Evaluation of Reactive Ion Etched Silicon Substrate
• Intrinsic Gettering of RIE Damage on Silicon Studied by Scanning DLTS and EBIC Methods
• Lifetime Evaluation of Denuded Zone Quality and Intrinsic Gettering Effect on Heavy Metals

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