Intrinsic Gettering of RIE Damage on Silicon Studied by Scanning DLTS and EBIC Methods

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概要

• 論文の詳細を見る

• The degradation of silicon substrates due to reactive ion etching (RIE) damage and its elimination by intrinsic gettering (IG) are studied using scanning DLTS (SDLTS) and EBIC methods in an SEM. The SDLTS study clarifies that a hole trap of E_v+0.37 eV is introduced uniformly by RIE. Surface stacking faults are grown from latent defects associated with the trap during subsequent annealing. The EBIC analysis can predict macroscopic lifetime degradation due to the defect generation. IG is found to be successful in eliminating the degradation, when subsequent annealing is performed in O_2, but not successful in N_2 annealing. The gettering mechanism for RIE damage is also discussed in terms of the dependence on the annealing ambient.

• 社団法人応用物理学会の論文
• 1987-07-20

著者

• Ikuta Kenji

  Atsugi Laboratories Ntt Electrical Communication Laboratories

• Ikuta Kenji

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• MOS C-t Evaluation of Reactive Ion Etched Silicon Substrate
• Intrinsic Gettering of RIE Damage on Silicon Studied by Scanning DLTS and EBIC Methods
• Lifetime Evaluation of Denuded Zone Quality and Intrinsic Gettering Effect on Heavy Metals

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