MOS C-t Evaluation of Reactive Ion Etched Silicon Substrate

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概要

• 論文の詳細を見る

• The distribution and electrical activity of damage in Si substrates created by reactive ion etching (RIE) in CF_4+ H_2 using a metal contamination free chamber was studied by MOS C-t measurement. RIE damage is divided into primary and secondary damage. Primary damage is caused by the penetration of carbon generated in the decomposition of reactive gas, and restricted to the region from the top surface to a depth of 3000 Å. Secondary damage is extended to more than a few μm in depth, although its intensity is lower than primary damage. It is also shown that electrical activity of secondary damage is affected by the original defects in the Si substrate.

• 社団法人応用物理学会の論文
• 1984-11-20

著者

• Ikuta Kenji

  Atsugi Laboratories Ntt Electrical Communication Laboratories

• Ikuta Kenji

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Ozaki Yoshiharu

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• MOS C-t Evaluation of Reactive Ion Etched Silicon Substrate
• Intrinsic Gettering of RIE Damage on Silicon Studied by Scanning DLTS and EBIC Methods
• Lifetime Evaluation of Denuded Zone Quality and Intrinsic Gettering Effect on Heavy Metals

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