Structural Analysis and Expeimental Characteristics of High-Voltage Bipolar Transistors with Shallow Junctions
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概要
- 論文の詳細を見る
Presented are a structural analysis and experimental characteristics of high voltage bipolar transistors having shallow junctions formed in a dielectrically-isolated island. Structural analysis was carried out by means of computer-aided calculations for a bipolar transistor equipped with a field-plate of non-uniform oxide thickness, providing new insight into the nature of the junction-curvature-limited breakdown voltage. A 350 V bipolar transistor, as a result, with a shallow junction has been developed. Experimental high-voltage bipolar transistors exhibit characteristics suitable for use in a subscriber line interface circuit.
- 社団法人応用物理学会の論文
- 1984-04-20
著者
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Ohno Terukazu
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Sakurai T
Univ. Fukui
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Sakurai Tetsuma
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation