Stability of Mo Gate MOS Devices Using High Purity Sputtering Target

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概要

• 論文の詳細を見る

• A Mo (molybdenum) sputtering target with a purity of five nines (99.999%) is developed. The stability of Mo gate MOS devices fabricated using this high purity target is also examined. No mobile charges are observed even in MOS capacitors annealed at 1000℃ in nitrogen. The breakdown strength of MOS capacitors with a very thin gate oxide 60 Å thick is held at 12 MV/cm after 1000℃ annealing. Long-term stability is also improved using this high purity Mo target.

• 社団法人応用物理学会の論文
• 1984-11-20

著者

• Amazawa Takao

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Shiono N

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Shiono Noboru

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• OIKAWA Hideo

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• HONMA Nakahachiro

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Oikawa Hideo

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Honma Nakahachiro

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Stability of Mo Gate MOS Devices Using High Purity Sputtering Target

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